关键词: 静电, 智能功率模块, IGBT

Abstract: In order to study the reason of IPM ESD failure and put forward the method to solve the ESD problem, the theoretical analysis and experimental verification of ESD loop are carried out. Because there is an ESD diode structure inside the driving IC, it will cause ESD voltage to be transmitted to the gate of IGBT through the ESD diode inside the driving IC when ESD is applied on one or two pins of IPM, resulting in IPM ESD failure.

Key words: Static electricity, Intelligient power module, IGBT