Abstract: This work studies the power loss of full-SiC intelligent power module, hybrid-SiC intelligent power module and Si intelligent power module. The experimental results show that the energy loss of full-SiC module IPM-1 is the lowest; the power loss of full-Si module IPM-4 is the highest; the power loss of only replacing switch devices with SiC-MOS is lower than that of only replacing Si-FRD with SiC-SBD; the power loss relationship is IPM-1 (SiC-MOS+SiC-SBD) < IPM-2 (SiC-MOS+Si-FRD) < IPM-3 (Si-IGBT+SiC-SBD) < IPM-4 (Si-IGBT+Si-FRD). The power loss of SiC IPM decreases with the decrease of gate resistance and decreases with the increase of gate voltage of SiC-MOS. The power loss of SiC IPM can be further reduced by properly reducing the gate resistance and increasing the gate voltage. The power loss of full-SiC intelligent power module can be reduced up to 40%.

Key words: SiC, Intelligent power module, Power loss