关键词: 发光二极管, P电极, 电子束真空蒸镀, 蒸镀源冷却时间, 界面电阻

Abstract: The effect of cooling time of evaporation source between layers and the performance of LED chip in vacuum evaporation process using Cr/Ti/Al structure as metal P electrode in red light conventional forward structure of LED chip is introduced. The cooling time of different evaporating plating sources between Cr/Ti and Ti/Al shows that for single-layer Cr/Ti or double-layer Cr/Ti and Ti/Al, the cooling time of evaporating plating sources can be shortened to a certain time, which can effectively reduce the voltage of LED chips in the production process, but has little effect on the brightness, indicating the interlayer boundary. Surface resistance is affected to some extent by the source cooling time.

Key words: Light-Emitting diode, P-side, Vacuum evaporation, Cooling time of evaporation source, Interface resistance