家电科技 ›› 2020, Vol. 0 ›› Issue (1): 70-73.doi: 10.19784/j.cnki.issn1672-0172.2020.01.010

• 论文 • 上一篇    下一篇

真空蒸镀中蒸镀源冷却时间对LED芯片性能的影响

郑宏   

  1. 天津三安光电有限公司 天津 300384
  • 出版日期:2020-02-01 发布日期:2020-02-13

Effect of cooling time of evaporation source on the performance of LED in vacuum evaporation

ZHENG Hong   

  1. Sanan Optoelectronic Co., Ltd. Tianjin 300384
  • Online:2020-02-01 Published:2020-02-13

摘要: 主要介绍了LED红光芯片的常规正装垂直结构,以Cr/Ti/Al结构作为金属P电极,在真空蒸镀过程中各层间的蒸镀源冷却时间对LED芯片性能的影响。通过实验Cr/Ti间、Ti/Al间不同蒸镀源冷却时间反映出,对于单层Cr/Ti间冷却时间缩短,或双层Cr/Ti间及Ti/Al间蒸镀源冷却时间缩短到一定时间内,均可以有效降低LED芯片在生产制备环节中的电压,而对亮度影响较小,说明层间界面电阻在一定程度上会受蒸镀源冷却时间的影响。

关键词: 发光二极管, P电极, 电子束真空蒸镀, 蒸镀源冷却时间, 界面电阻

Abstract: The effect of cooling time of evaporation source between layers and the performance of LED chip in vacuum evaporation process using Cr/Ti/Al structure as metal P electrode in red light conventional forward structure of LED chip is introduced. The cooling time of different evaporating plating sources between Cr/Ti and Ti/Al shows that for single-layer Cr/Ti or double-layer Cr/Ti and Ti/Al, the cooling time of evaporating plating sources can be shortened to a certain time, which can effectively reduce the voltage of LED chips in the production process, but has little effect on the brightness, indicating the interlayer boundary. Surface resistance is affected to some extent by the source cooling time.

Key words: Light-Emitting diode, P-side, Vacuum evaporation, Cooling time of evaporation source, Interface resistance

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